Open source design and simulation program for quantum semiconductor devices including quantum cascade lasers (excerpt)ĭEVSIM TCAD Semiconductor Device Simulator ĮCORCE: A TCAD Tool for Total Ionizing Dose and Single Event Effect Modeling Transient gamma and neutron irradiation effects. The tool is capable of modeling at unprecedented fidelity including

Simulator which can take into account all the relevant quantumĮffects, thank to the implementation of the Bohm effective potentialĬharon is an open-source semiconductor device modeling code, widely referred to as a TCAD (technology computer-aided design) code, developed at Sandia National Laboratories.Ĭharon offers the solution options of stabilized Galerkin (supg) methods, Scharfetter-Gummel (CVFEM) methods and a unique Exponentially-Fitted Flux Petrov-Galerkin method (EFFPG).īy applying finite element & massively parallel solver technology, We then identify the thickness of the Ferroelectric layer over the existing gate stack with a view to achieve steep sub-threshold slope (SS) while simultaneously ensuring hysteresis-free characteristics, including enhanced Analog as well as Digital performance of the device.Archimedes is the GNU package for the design and simulation of Through detailed process simulations, the process steps required to achieve this device design are determined, thus providing a more practical appraisal of the feasibility of the device.

In this paper, we firstly present the design of an optimized N-channel Partially Junction-less Bulk MOSFET with a view to suppressing various leakage mechanisms, while also taking channel quantization effects into account. With the use of Ferroelectric materials in the gate stack, enhanced transverse (gate) electric field has the potential to enable greater scalability, which needs to be further explored in the context of planar Bulk MOSFETs.

Despite the use of High-k gate stacks, poor channel electrostatics at short channel lengths has limited the applicability of conventional Bulk MOSFETs.

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